Instrument/equipment Core/facility: West Campus Cleanroom

Photolithography

Lauren McCabe, PhD

Primary contact

About the instruments

  1. Suss UV Mask Aligner
  2. Heidelberg μMLA Maskless Aligner

Suss UV Mask Aligner

The MJB4 Mask Aligner from SUSS MicroTec is the perfect system for laboratories and small volume production. Easy to use and compact in size, the SUSS MJB4 represents an economical, highly flexible and efficient mask aligner solution for all kinds of R&D applications. It offers an excellent platform for researchers to develop new processes and technologies on a highly versatile, state-of-the-art mask aligner platform. Read more about photolithography in Specifications.

Scientific apparatus
MJB4 Mask Aligner from SUSS MicroTec
  • Fast and highly accurate alignment with SUSS single field or split field microscope
  • HR optics enables high-resolution prints down to 0.5 μm
  • Combined SUSS broadband optics (UV250/300/400) allows for fast switching between different wavelengths
  • Wafer and substrate handling up to 100 mm
  • Upgradable with a UV-nano imprint lithography (NIL) toolkit

Manufacturer product page
 

Heidelberg μMLA Maskless Aligner

Scientific apparatus on a rolling cart
Heidelberg Instruments μMLA

The Heidelberg Instruments μMLA is a maskless aligner used for photolithography. The tool is outfitted with a 365 nm exposure LED. It is capable of feature sizes ≥1.0 μm written at a speed of 40 mm2/min and a second layer alignment accuracy of 1000 nm across 50 mm. The exposure area can handle up to a 6-inch wafer.

Available to Yale researchers & external researchers

Specifications

More on the Suss MJB4 Mask Aligner

Photolithography uses light to transfer a geometric pattern from a photomask to light-sensitive photoresist on the substrate.

MJB4 Mask Aligner is a contact lithography, which means there is no focus lens or large gap between photomask and substrate. The resolution of features which can be made by MJB4 depends on the wavelength of UV light and the gap distance between mask and substrate.

The UV source for MJB4 is a 350 W mercury arc lamp, which typically has 365 nm and 405 nm peaks.

The contact modes include:

Soft contact: Pushes the wafer against the mask using mechanical force. The resolution is around 2 μm.

Hard contact: Pushes the wafer against the mask using N2 gas. The resolution is 1 μm.