Helios G4 UX DualBeam System
Helios G4 UX DualBeam System parameters
The Helios G4 UX is designed for the highest-quality SEM imaging, TEM sample and cross-section sample preparation, milling and deposition of complex structures with critical dimensions of less than 10 nm, multi-modal subsurface and 3D data collection.
- Electron-beam imaging provides the most complete sample information with sharp, refined, and charge-free contrast obtained from 5 integrated in-column and below-the-lens detectors.
- Reveal the finest details with the next-generation UC+ monochromator technology with higher current, enabling sub-nanometer performance at low energies.
- Fast, high-quality TEM or SEM cross-section sample preparation through AutoTEM 4 software.
- The highest quality, multi-modal subsurface and 3D information with the most precise targeting of the region of interest using optional Auto Slice & View™ 4(AS&V4) software.
- Complex structure building up using Nanobuilder software.
- EBSD and EDX measurement through Pathfinder software.
- Electron beam lithography through Nanometer Pattern Generation System (NPGS).
- Precise sample navigation tailored to individual application needs thanks to the high stability and accuracy of the 150 mm Piezo stage and in-chamber Nav-Cam.
- Artifact-free imaging based on integrated sample cleanliness management and dedicated imaging modes such as SmartScan™ and DCFI (drift correction frame integration).
Availability differs per offering
Specifications
Electron optics
- Source: Schottky field emitter
- Resolution: 0.6 nm at 15–2 kV 0.7 nm at 1 kV (with Beam Deceleration) 1.0 nm at 500 V (with Beam Deceleration and ICD)
- Acceleration voltage: 350 V to 30 kV
- Landing energies: Adjustable from 20 eV to 30 keV
- Beam current: 0.8 pA–100 nA
- Dual-mode magnetic immersion / field-free lens electron optics
- Everhart-Thornley SE detection
- In-lens SE and BSE detection specially designed for high-resolution imaging at both high and low kV
- Mid-column (MD) and in-column (ICD) backscattered electron detectors
- Retractable BS detector, designed for Z-contrast imaging
- UC+ monochromator technology with higher current, enabling sub-nanometer performance at low energies
- Beam deceleration technology for low-energy imaging of non-conductive specimens
Ion optics
- Phoenix field emission focused ion-beam optics with liquid gallium ion emitter
- Source lifetime: 1000 hours
- Voltage: 500 V–30 kV
- Beam current: 0.1 pA–65 nA (15-position aperture strip)
- Resolution: 4.0 nm at 30 kV
- Detection: Everhart-Thornley and ICE detectors (secondary electron and ion detectors)
Rates
| Offering | Yale user | External academic user | For-profit user | Staff support for for-profit user |
|---|---|---|---|---|
| Helios G4 UX | $48/hour | $80/hour | $240/hour | $200/hour |
Training & Services
Training
Users can be trained in all functions to operate independently.
Shize Yang
Service
Service can be provided on a case-by-case situation.
Shize Yang