Instrument/Equipment Core/Facility: Aberration-Corrected Electron Microscopy (ACEM) Core

Helios G4 UX DualBeam System

Helios G4 UX DualBeam (electron & ion-beam) microscope.

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Helios G4 UX DualBeam System parameters

The Helios G4 UX DualBeam (electron & ion-beam) microscope is designed for the highest-quality SEM imaging, TEM sample and cross-section sample preparation, milling and deposition of complex structures with critical dimensions of less than 10 nm, multi-modal subsurface and 3D data collection.

  • Electron beam imaging provides the most complete sample information with sharp, refined, and charge-free contrast obtained from 5 integrated in-column and below-the-lens detectors.
  • Reveal the finest details with the next-generation UC+ monochromator technology with higher current, enabling sub-nanometer performance at low energies.
  • Fast, high-quality TEM or SEM cross-section sample preparation through AutoTEM 4 software.
  • The highest quality, multi-modal subsurface and 3D information with the most precise targeting of the region of interest using optional Auto Slice & View™ 4 (AS&V4) software.
  • Complex structure building up using Nanobuilder software.
  • EBSD and EDX measurement through Pathfinder software.
  • Electron beam lithography through Nanometer Pattern Generation System (NPGS).
  • Precise sample navigation tailored to individual application needs thanks to the high stability and accuracy of the 150 mm Piezo stage and in-chamber Nav-Cam.
  • Artifact-free imaging based on integrated sample cleanliness management and dedicated imaging modes such as SmartScan™ and DCFI (drift correction frame integration).

Electron optics

  • Source: Schottky field emitter
  • Resolution: 0.6 nm at 15 – 2 kV 0.7 nm at 1 kV (with Beam Deceleration) 1.0 nm at 500 V (with Beam Deceleration and ICD)
  • Acceleration Voltage: 350 V to 30 kV
  • Landing energies: Adjustable from 20 eV to 30 keV
  • Beam current: 0.8 pA – 100 nA
  • Dual-mode magnetic immersion / field-free lens electron optics
  • Everhart-Thornley SE detector for SE detection
  • In-lens SE and BSE detection specially designed for high-resolution imaging at both high and low kV’s
  • Mid-column (MD) and in-column (ICD) backscattered electron detectors
  • Retractable BS detector, designed for Z-contrast imaging
  • UC+ monochromator technology with higher current, enabling sub-nanometer performance at low energies
  • Beam deceleration technology for low energy imaging of non-conductive specimens

Ion optics 

  • Phoenix field emission focused ion beam optics with liquid Gallium ion emitter. 
  • Source lifetime: 1000 hours
  • Voltage: 500 V to 30 kV
  • Beam current: 0.1 pA - 65 nA (15-position aperture strip)
  • Resolution: 4.0 nm at 30 kV
  • Detection: Everhart-Thornley and ICE detectors (secondary electron and ion detectors)
     

Training & Services

Training

Users can be trained in all functions to operate independently.

Shize Yang

Service

Service can be provided on a case-by-case situation.

Shize Yang