Dry and plasma etching

1. Oxford 100 RIE-ICP
2. Glow Research AutoGlow 200 Etcher

Oxford 100 RIE-ICP

Reactive ion etching is a process of transferring a pattern into a material using reactive gases. With up to 11 process gases, our PlasmaPro 100 Reactive Ion Etcher from Oxford Instruments can etch a wide variety of materials such as two-dimensional thin film, silicon, and wide band gap semiconductors with the desired features sizes, aspect ratio and depths. 

• The RIE power (300W) and ICP power (3kW) are separated to control plasma density and energy respectively
• Water cooling substrate
• Able to handle different materials such as GaN, GaAs, AlN, Si, and SiO2. Process gases include non-toxic CHF3, CF4, SF6, C4F8, Ar, H2, CH4 and O2, as well as toxic Cl2 and BCl3 gases
• Can process wafers with diameter up to 200 mm
• A load-lock is provided with a transfer arm

Glow Research AutoGlow 200 Etcher

AutoGlow 200 Etcher from Glow Research is a benchtop and powerful etcher which can be used in surface modification, plasma clean prior to deposition and bonding, SU8 or Biochip channel clean or treatment, PDMS activation prior to bonding.

• 1 to 300 watts at 13.56 MHz RF generator: 10 watts for gentle processing, high power for more aggressive applications.
• Can set power in one-watt increments. Display to show the actual power going into the chamber
• With two electrode sample shelves, the system can be easily configured to top power for standard plasma processing or to bottom electrode power for RIE-style processing
• Designed for use with oxygen, argon or CF₄-type gases
• N₂ purge, with separate nitrogen flowmeter used for adjustable N₂ purge
• Can accommodate one 8” wafer or a 200 mm x 200 mm-square substrate.

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