Chemical vapor deposition
Yong Sun
DirectorBuilding: Becton Engineering and Applied Science Center, 5th floor
About the instrument
Chemical vapor deposition (CVD) is a method used to deposit films via exposure to volatile precursors. Some common examples are plasma-enhanced CVD, where silane gas is ionized to combine with ammonia to form nitride, or nitrous oxide to form silica. ALD operates through alternating pulses of organometallic precursors and water vapor to form a wide selection of complicated metal oxides. Acceptable materials vary from system to system, so be sure to confirm with a staff member before introducing new substrates to a system. Additionally, be sure you understand the thermal limitations of your substrate.
Available to Yale researchers & external researchers
Equipment list
Fiji Plasma ALD
The Veeco Fiji® G2 is a modular, high-vacuum Atomic Layer Deposition (ALD) system designed for flexible and precise deposition of ultra-thin films. It supports both thermal and plasma-enhanced ALD (PEALD) processes, offering excellent conformality and atomic-level thickness control for complex 3D structures and high-aspect-ratio features.
The Fiji system features multiple precursor lines and RF plasma capability, enabling a wide variety of material chemistries. Its high-vacuum architecture and customizable process modules make it ideal for advanced R&D applications in microelectronics, photonics, and quantum devices.
- Available materials: AlN, AlO, HfO, SiN, SiO, NbN, TiO
- Tool manager: Yong Sun
- Location: Main Campus Cleanroom
- Internal rate: Included with cleanroom access
SAMCO PD-220NL PECVD
The SAMCO PD-220NL PECVD uses 5% SiH4, N2O, and NH3 plasma to deposit silicon oxides and nitrides for masking and insulating substrates. The chamber is open-load. Typical process temperatures are 300 to 400 C.
- Available materials: SiO2, Si3N4
- Tool manager: Yong Sun
- Location: Main Campus Cleanroom
- Internal rate: Included with cleanroom access
Tystar MiniTytan 4600 LPCVD Furnace
The Tystar Tytan Mini Series is a compact four-tube LPCVD furnace system designed for high-uniformity thin film deposition. Each tube is independently controlled and configured to support a range of low-pressure thermal processes including oxidation, annealing, and LPCVD of various materials. The system features fully automated recipe control, touch-screen interface, and a vertically stacked design optimized for space-limited cleanroom environments.
At Yale Cleanroom, the system includes four process tubes, each designated for a specific application:
Tube 1: Dry and wet oxidation, configured with a Trans LC (TLC) liquid source delivery system for precise control of oxidation environments.
Tube 2: Vacuum annealing for applications requiring controlled thermal treatment under low pressure.
Tube 3 (planned): LPCVD of low-stress silicon nitride and stoichiometric Si₃N₄ films.
Tube 4 (planned): LPCVD of polycrystalline silicon films.
Currently, Tube 1 and Tube 2 are fully installed and operational. Tubes 3 and 4 are scheduled for installation in future phases.
Process types: Oxidation (dry/wet), vacuum anneal, LPCVD
Planned films: SiO₂, Si₃N₄, low-stress nitride, poly-Si
Wafer size: Up to 4"
Tool manager: Yeongjae Shin
Location: Main Campus Cleanroom
Internal rate: Included with cleanroom access
SSI Solaris RTA
The Solaris 150 is a manual loading benchtop RTP system for R&D and pre-production. It can process up to 150mm substrates at a temperature range from RT-1300 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emissivity differences. The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity.
- Gases: O2, Ar, N2, N2/H2 (forming gas)
- Wafer sizes: 2”, 3”, 4”, 5” and 6” wafers and pieces
- Ramp-up rate: 10-200°C per second
- Steady-state duration: 0-600 seconds per step
- Ramp-down rate: temperature-dependent, max 150°C per second
- Recommended steady-state temperature range: 200°C - 1250°C
- Thermocouple temperature accuracy: +/- 2.5°C
- Temperature repeatability: +/- 3°C or better at 1150°C wafer-to-wafer
- Temperature uniformity @ 1150°C: +/- 5°C across a 6” (150 mm) wafer
- Tool manager: Yong Sun
- Location: Main Campus Cleanroom
- Internal rate: Included with cleanroom access